The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9490142 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 08, 2016

Filed:

Apr. 09, 2015
Applicants:

Jiali Wu, Yorktown Heights, NY (US);

Kellsie Shan, Yorktown Heights, NY (US);

Inventors:

Jiali Wu, Yorktown Heights, NY (US);

Kellsie Shan, Yorktown Heights, NY (US);

Assignee:

Qualsig Inc., Carmel, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B08B 3/04 (2006.01); H01L 21/321 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); C09G 1/04 (2006.01); B08B 1/00 (2006.01); B08B 3/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3212 (2013.01); C09G 1/04 (2013.01); H01L 21/02074 (2013.01); H01L 21/7684 (2013.01); H01L 23/53228 (2013.01); B08B 1/00 (2013.01); B08B 1/002 (2013.01); B08B 3/00 (2013.01); B08B 3/04 (2013.01);
Abstract

This disclosure relates post chemical mechanical planarization cleaning composition of semiconductor substrate for advanced electronics fabrication and packaging. It provides novel corrosion inhibition and quality upmost Cu-low K surfaces to the demanding reliability of nano device and Cu interconnection. Its efficacious cleaning without changing of ultra-low K dielectric and interfering with ultimate electronics performance also offers a cleaning solution to the Cu-low K structure of post reactive ion etching as well as resist ashing in semiconductor fabrication process flow.


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