The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2016
Filed:
Aug. 24, 2015
Applicants:
Hyun Yong Go, Suwon-si, KR;
Eun Young Lee, Suwon-si, KR;
Jung Geun Jee, Seoul, KR;
Eun Yeoung Choi, Seoul, KR;
Jin Gyun Kim, Suwon-si, KR;
Hun Hyeong Lim, Hwaseong-si, KR;
Inventors:
Hyun Yong Go, Suwon-si, KR;
Eun Young Lee, Suwon-si, KR;
Jung Geun Jee, Seoul, KR;
Eun Yeoung Choi, Seoul, KR;
Jin Gyun Kim, Suwon-si, KR;
Hun Hyeong Lim, Hwaseong-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/321 (2006.01); H01L 29/49 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 21/321 (2013.01); H01L 27/11524 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01); H01L 29/495 (2013.01);
Abstract
There are provided methods for manufacturing a semiconductor device including providing a substrate including a metal layer including an oxidized surface layer in a heat treatment chamber, generating hydrogen radicals within the heat treatment chamber and reducing the oxidized surface layer of the metal layer using the hydrogen radicals.