The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2016
Filed:
Jan. 26, 2015
Applicant:
Unist Academy-industry Research Corporation, Ulsan, KR;
Inventors:
Assignee:
UNIST ACADEMY-INDUSTRY RESEARCH CORPORATION, Ulsan, KR;
Primary Examiner:
Int. Cl.
CPC ...
H01B 1/04 (2006.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01); C01B 31/04 (2006.01); H01L 29/16 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01B 1/04 (2013.01); C01B 31/0446 (2013.01); H01L 21/0262 (2013.01); H01L 21/02527 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 29/1606 (2013.01); H01L 29/66742 (2013.01); H01L 29/78684 (2013.01); H01L 29/78696 (2013.01);
Abstract
Disclosed are boron/nitrogen co-doped graphene for semiconductor applications and a method for producing the same. The boron/nitrogen co-doping allows the use of the doped graphene in a wider variety of applications, including semiconductors. In contrast, graphene structures produced by conventional methods have good physical, chemical, and electrical stability but cannot be used in semiconductor applications due to the absence of band gaps therein. In addition, the boron/nitrogen co-doping makes the doped graphene highly dispersible in organic solvents.