The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2016
Filed:
Jan. 21, 2016
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Sebastian Schafer, San Jose, CA (US);
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Abstract
A magnetic junction and method and programming the magnetic junction are described. The magnetic junction has a free layer, a reference layer, and a nonmagnetic spacer layer between reference and free layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The free layer has a perpendicular magnetic anisotropy exceeding its out-of-plane demagnetization energy a quiescent state. The free layer has a magnetostriction such that the perpendicular magnetic anisotropy changes in the presence of a programming voltage applied for the magnetic junction, canting that the magnetic moment by at least five degrees from its quiescent direction. The programming voltage is at least 0.1 volt and not more than 2 volts. The nonmagnetic spacer layer is an insulating tunneling barrier layer and/or the magnetic junction includes an additional insulating layer adjacent to the opposite interface of the free layer.