The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 08, 2016

Filed:

Feb. 01, 2008
Applicants:

Aaron D. Franklin, Lafayette, IN (US);

Matthew R. Maschmann, Chandler, AZ (US);

Timothy S. Fisher, West Lafayette, IN (US);

Timothy D. Sands, West Lafayette, IN (US);

Inventors:

Aaron D. Franklin, Lafayette, IN (US);

Matthew R. Maschmann, Chandler, AZ (US);

Timothy S. Fisher, West Lafayette, IN (US);

Timothy D. Sands, West Lafayette, IN (US);

Assignee:

PURDUE RESEARCH FOUNDATION, West Lafayette, IN (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C25D 5/02 (2006.01); C25D 11/04 (2006.01); C01B 31/02 (2006.01); C25D 7/00 (2006.01); B82Y 10/00 (2011.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01); C25D 5/18 (2006.01);
U.S. Cl.
CPC ...
C25D 7/00 (2013.01); B82Y 10/00 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C01B 31/0233 (2013.01); C01B 31/0253 (2013.01); C25D 5/02 (2013.01); C25D 5/18 (2013.01); C25D 11/045 (2013.01); C01B 2202/02 (2013.01); C01B 2202/08 (2013.01);
Abstract

In one embodiment, SWNTs are synthesized from an embedded catalyst in a modified porous anodic alumina (PAA) template. Pd is electrodeposited into the template to form nanowires that grow from an underlying conductive layer beneath the PAA and extend to the initiation sites of the SWNTs within each pore. Individual vertical channels of SWNTs are created, each with a vertical Pd nanowire back contact. Further Pd deposition results in annular Pd nanoparticles that form on portions of SWNTs extending onto the PAA surface. Two-terminal electrical characteristics produce linear I-V relationships, indicating ohmic contact in the devices.


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