The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2016
Filed:
Mar. 14, 2013
Korea Institute of Science and Technology, Seoul, KR;
Sang Whan Park, Seoul, KR;
Kyoung Sop Han, Seoul, KR;
Sung Ho Yun, Gwangmyeong-si, KR;
Jin Oh Yang, Seoul, KR;
Gyoung Sun Cho, Guri-si, KR;
Mi Rae Youm, Seoul, KR;
Yung Chul Jo, Seoul, KR;
KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY, Seoul, KR;
Abstract
Disclosed herein is a method for manufacturing SiC powders with a high purity, and more particularly, a method for manufacturing SiC powders with a high purity by reating a solid phase carbon source as raw materials with gas phase silicon sources generated from a starting material composed of metallic silicon and silicon dioxide powders and, in which it is easy to control the size and crystalline phase of the SiC powders by changing the compositions of the gas phase silicon source to the solid phase carbon source mole ratio, and the temperature and time for the heat treatment.