The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 2016

Filed:

Feb. 05, 2015
Applicants:

Min Cheol Shin, Daejeon, KR;

Jae Hyun Lee, Daejeon, KR;

Doo Hyung Kang, Daejeon, KR;

Jun Beom Seo, Daejeon, KR;

Woo Jin Jeong, Daejeon, KR;

Inventors:

Min Cheol Shin, Daejeon, KR;

Jae Hyun Lee, Daejeon, KR;

Doo Hyung Kang, Daejeon, KR;

Jun Beom Seo, Daejeon, KR;

Woo Jin Jeong, Daejeon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/315 (2006.01); H03L 7/26 (2006.01); H03K 19/16 (2006.01); H03K 19/0185 (2006.01); H03B 15/00 (2006.01); H01L 29/66 (2006.01); B82Y 25/00 (2011.01); H01L 43/02 (2006.01); G11C 11/16 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H03K 19/16 (2013.01); B82Y 25/00 (2013.01); G11C 11/16 (2013.01); H01L 29/66984 (2013.01); H01L 43/02 (2013.01); H01L 43/10 (2013.01); H03B 15/006 (2013.01); H03K 19/018578 (2013.01); H03L 7/26 (2013.01);
Abstract

A negative capacitance logic device includes a first field effect transistor (FET) and a second FET. The first FET is coupled between a power supply voltage and an output node, and the first FET includes a ferroelectric having a negative capacitance. The second FET is coupled between the output node and a ground voltage, and the second FET includes a ferroelectric having a negative capacitance. The negative capacitance logic differentiates an input voltage applied to an input node to provide an output voltage at the output node.


Find Patent Forward Citations

Loading…