The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2016
Filed:
Jun. 19, 2015
Hella Corporate Center Usa, Inc., Plymouth Township, MI (US);
Juncheng Lu, Flint, MI (US);
Hua Bai, Flint, MI (US);
Hella Corporate Center USA, Inc., Plymouth Township, MI (US);
Abstract
A driver circuit has a gate drive terminal that produces a gate drive signal to control paralleled power semiconductor switches, such as GaN high electron mobility transistor (HEMT) devices. One of the switches is closest to the gate drive terminal such that its gate drive loop inductance is smaller than the remaining switches that are farther away having a larger loop inductance. An additional resistor or gate-source capacitor is provided in the gate drive circuit of the closest switch which increases the total gate resistance of the closest switch compared to the remaining switches, which delays the turn off time of the closest switch. The delay permits zero voltage switching turn-off of the remaining switches to reduce noise. The closest switch is hard switched off but has the smallest loop inductance, which allows optimized turn off.