The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 2016

Filed:

Dec. 19, 2014
Applicant:

Lg Innotek Co., Ltd., Seoul, KR;

Inventors:

Dae Sung Kang, Gwangju, KR;

Hyo Kun Son, Gwangju, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/14 (2010.01); H01L 33/32 (2010.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/30 (2010.01); H01L 33/02 (2010.01);
U.S. Cl.
CPC ...
H01L 33/14 (2013.01); H01L 33/0025 (2013.01); H01L 33/025 (2013.01); H01L 33/06 (2013.01); H01L 33/145 (2013.01); H01L 33/30 (2013.01); H01L 33/32 (2013.01); H01L 33/02 (2013.01);
Abstract

Provided are a semiconductor light emitting device. The semiconductor light emitting device comprises a first semiconductor layer; a second semiconductor layer disposed on the first semiconductor layer; an active layer disposed between the first semiconductor layer and the second semiconductor layer; a third semiconductor layer disposed on the second semiconductor layer; and a fourth semiconductor layer disposed on the third semiconductor layer. The second semiconductor layer is formed of an InAlGaN semiconductor layer, the third semiconductor layer is formed of an AlGaN semiconductor layer, and the fourth semiconductor layer is formed of a GaN semiconductor layer.


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