The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2016
Filed:
Apr. 24, 2013
Applicant:
Osram Opto Semiconductors Gmbh, Regensburg, DE;
Inventors:
Joachim Hertkorn, Alteglofsheim, DE;
Alexander Frey, Regensburg, DE;
Christian Schmid, Regensburg, DE;
Assignee:
OSRAM OPTO SEMICONDUCTORS GMBH, Regensburg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 21/02 (2006.01); H01L 31/0304 (2006.01); H01L 31/18 (2006.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0066 (2013.01); H01L 21/0251 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 21/02488 (2013.01); H01L 21/02502 (2013.01); H01L 21/02513 (2013.01); H01L 21/02661 (2013.01); H01L 31/03044 (2013.01); H01L 31/1852 (2013.01); H01L 31/1856 (2013.01); H01L 33/0075 (2013.01); H01L 33/32 (2013.01); Y10T 428/24355 (2015.01);
Abstract
An epitaxy substrate () for a nitride compound semiconductor material is specified, which has a nucleation layer () directly on a substrate () wherein the nucleation layer () has at least one first layer () composed of AlON with a column structure. A method for producing an epitaxy substrate and an optoelectronic semiconductor chip comprising an epitaxy substrate are furthermore specified.