The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2016
Filed:
Nov. 25, 2015
Applicant:
Korea Institute of Science and Technology, Seoul, KR;
Inventors:
Assignee:
KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY, Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/20 (2006.01); H01L 31/032 (2006.01); H01L 31/065 (2012.01); H01L 21/02 (2006.01); H01L 31/0392 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/208 (2013.01); H01L 21/02568 (2013.01); H01L 31/0322 (2013.01); H01L 31/0323 (2013.01); H01L 31/03923 (2013.01); H01L 31/065 (2013.01); H01L 31/1864 (2013.01);
Abstract
Provided is a CIGSSe thin film for a solar cell, a method for preparing the same, and a solar cell using the same. More particularly, the CIGSSe thin film for a solar cell shows a decrease in peak intensity of sulfur from the surface of the thin film to the local minimum value point of sulfur content in the depth direction, after the analysis based on the Auger electron spectroscopy, and thus controls the band-gap in the thin film. Therefore, the solar cell including the CIGSSe thin film shows an excellent effect in improving photoelectric conversion efficiency.