The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2016
Filed:
Feb. 28, 2013
Imec, Leuven, BE;
Katholieke Universiteit Leuven, Leuven, BE;
Alex Masolin, Leuven, BE;
Maria Recaman Payo, Leuven, BE;
IMEC, Leuven, BE;
Katholieke Universiteit Leuven, Leuven, BE;
Abstract
A method for fabricating thin crystalline photovoltaic cells is disclosed. In one aspect, the method includes: forming a weakening layer in a surface portion of a semiconductor substrate; epitaxially growing a stack of semiconductor layers on the substrate for forming an active layer of the photovoltaic cell, the stack having a first thermal coefficient of expansion; providing on the stack patterned contact layer for forming electrical contacts of the photovoltaic cell, the patterned contact layer having a second thermal coefficient of expansion different from the first thermal coefficient of expansion. The process of providing a patterned contact layer simultaneously induces a tensile stress in the weakening layer, resulting in a lift-off from the substrate of a structure including the stack of semiconductor layers and the patterned contact layer.