The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 2016

Filed:

Oct. 11, 2012
Applicants:

Andrew M Rappe, Penn Valley, PA (US);

Peter K Davies, Newtown, PA (US);

Jonathan E Spanier, Bala Cynwyd, PA (US);

Ilya Grinberg, Fair Lawn, NJ (US);

Don Vincent West, Minneapolis, MN (US);

Inventors:

Andrew M Rappe, Penn Valley, PA (US);

Peter K Davies, Newtown, PA (US);

Jonathan E Spanier, Bala Cynwyd, PA (US);

Ilya Grinberg, Fair Lawn, NJ (US);

Don Vincent West, Minneapolis, MN (US);

Assignees:

The Trustees Of The University Of Pennsylvania, Philadelphia, PA (US);

Drexel University, Philadelphia, PA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/032 (2006.01); H01L 31/0352 (2006.01); H01L 31/072 (2012.01); C04B 35/495 (2006.01); C01G 33/00 (2006.01); C01G 53/00 (2006.01);
U.S. Cl.
CPC ...
H01L 31/032 (2013.01); C01G 33/00 (2013.01); C01G 53/66 (2013.01); C04B 35/495 (2013.01); H01L 31/03529 (2013.01); H01L 31/072 (2013.01); C01P 2002/34 (2013.01); C01P 2002/50 (2013.01); C01P 2006/40 (2013.01); C04B 2235/3201 (2013.01); C04B 2235/3215 (2013.01); C04B 2235/3279 (2013.01); C04B 2235/3298 (2013.01); C04B 2235/664 (2013.01); C04B 2235/768 (2013.01); C04B 2235/79 (2013.01); Y02E 10/50 (2013.01);
Abstract

Disclosed herein are ferroelectric perovskites characterized as having a band gap, Egap, of less than 2.5 eV. Also disclosed are compounds comprising a solid solution of KNbO3 and BaNi1/2Nb1/2O3-delta, wherein delta is in the range of from 0 to about 1. The specification also discloses photovoltaic devices comprising one or more solar absorbing layers, wherein at least one of the solar absorbing layers comprises a semiconducting ferroelectric layer. Finally, this patent application provides solar cell, comprising: a heterojunction of n- and p-type semiconductors characterized as comprising an interface layer disposed between the n- and p-type semiconductors, the interface layer comprising a semiconducting ferroelectric absorber layer capable of enhancing light absorption and carrier separation.


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