The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2016
Filed:
Jul. 15, 2014
Boe Technology Group Co., Ltd., Beijing, CN;
Hefei Boe Optoelectronics Technology Co., Ltd., Anhui, CN;
Yunqi Zhang, Beijing, CN;
Sangsoo Park, Beijing, CN;
Xunze Zhang, Beijing, CN;
Liang Peng, Beijing, CN;
Liumin Yu, Beijing, CN;
Weihua Fang, Beijing, CN;
Yanrui Shen, Beijing, CN;
Liang Xiao, Beijing, CN;
Daowu Huang, Beijing, CN;
Zhiyuan Dong, Beijing, CN;
Longlong Duan, Beijing, CN;
Jian Wang, Beijing, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., Hefei, Anhui, CN;
Abstract
The present invention provides a thin film transistor and a manufacturing method thereof, an array substrate, and a display apparatus. The thin film transistor of the present invention comprises a gate, a gate insulation layer, a semiconductor active region, and a source and a drain connected with the semiconductor active region, and further comprises a surface charge transfer layer in contact with the semiconductor active region, the surface charge transfer layer is located above or below the semiconductor active region, and is used for causing the semiconductor active region to generate a large number of holes or electrons therein without changing the lattice structure of the semiconductor active region. In the thin film transistor, charge transfer occurs between the semiconductor active region and the surface charge transfer layer so that the doped semiconductor active region is formed, thus the performance of the thin film transistor is significantly improved.