The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 2016

Filed:

Aug. 14, 2014
Applicant:

Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;

Inventors:

Noboru Takeuchi, Cheonan-si, KR;

Kwi Hyun Kim, Yongin-si, KR;

Seung Soo Baek, Hwaseong-si, KR;

Si Hyun Ahn, Asan-si, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 29/78648 (2013.01); H01L 29/78696 (2013.01);
Abstract

A thin film transistor includes: a gate electrode; a source electrode; a drain electrode facing the source electrode; an oxide semiconductor layer disposed between the gate electrode and the source electrode or between the gate electrode and the drain electrode; and a gate insulating layer disposed between the gate electrode and the source electrode or between the gate electrode and the drain electrode, wherein when a signal applied to the gate electrode is a turnoff signal, a voltage applied to the gate electrode has a negative value.


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