The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2016
Filed:
Apr. 25, 2013
Applicant:
Hitachi, Ltd., Chiyoda-ku, Tokyo, JP;
Inventor:
Toshiyuki Usagawa, Urawa, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); G01N 27/414 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78 (2013.01); G01N 27/4141 (2013.01); H01L 29/66477 (2013.01);
Abstract
A technique capable of realizing a semiconductor gas sensor having a high rising response speed is provided. A gate insulating film (e.g., a SiOfilm) is formed on a Si layer, and a modified TiOx (a TiOx nanocrystal) film is formed on the gate insulating film. Further, on the modified TiOx film, a Pt film is formed. This Pt film is composed of a plurality of Pt crystal grains, and in a crystal grain boundary gap existing among the plurality of Pt crystal grains, Ti and oxygen (O) are present, and particularly, a TiOx nanocrystal is formed on a surface in the vicinity of a grain boundary triple point as the center.