The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2016
Filed:
Nov. 04, 2014
Fuji Electric Co., Ltd., Kawasaki-shi, JP;
Hong-fei Lu, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, JP;
Abstract
An n-type low lifetime adjustment region is provided in a portion inside an ntype drift region deeper than the bottom surface of a termination p-type base region or p-type guard ring from a substrate front surface, separated from the termination p-type base region and the p-type guard ring. The carrier lifetime of the n-type low lifetime adjustment region is shorter than the carrier lifetime of the ntype drift region. Because of this, it is possible to provide a reverse blocking IGBT such that it is possible to suppress both a high temperature reverse leakage current and an increase in turn-off loss, while suppressing deterioration in the trade-off relationship between the turn-off loss and the on-state voltage.