The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2016
Filed:
Feb. 04, 2014
Kabushiki Kaisha Toshiba, Minato-Ku, Tokyo, JP;
Yoshiyuki Kondo, Yokohama, JP;
Masakazu Goto, Yokohama, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Abstract
A semiconductor device includes a semiconductor layer opposing to a bottom surface and a side surface of a gate electrode. An insulation film is provided between the bottom surface of the gate electrode and the semiconductor layer and between the side surface of the gate electrode and the semiconductor layer. A first conduction-type drain layer is provided in the semiconductor layer on a side of an end part of one of the bottom surface and the side surface of the gate electrode. A second conduction-type source layer is provided in the semiconductor layer opposing to the other one of the bottom surface and the side surface of the gate electrode. A second conduction-type extension layer is provided in the semiconductor layer opposing to a corner part between the side surface and the bottom surface of the gate electrode and has a lower impurity concentration than that of the source layer.