The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2016
Filed:
Nov. 25, 2015
Joled Inc., Tokyo, JP;
Yuta Sugawara, Tokyo, JP;
JOLED INC., Tokyo, JP;
Abstract
A method of fabricating a TFT substrate in which a thin-film transistor is formed on a substrate, includes: forming an oxide semiconductor layer above the substrate; forming a first oxide film on the oxide semiconductor layer; performing an oxidation treatment on the oxide semiconductor layer, after the first oxide film is formed; and forming a second oxide film above the first oxide film, after the oxidation treatment is performed. In the performing of the oxidation treatment, at least one parameter of the oxidation treatment is set, based on a predetermined relationship between the at least one parameter and the threshold value of the thin-film transistor, so that the threshold value becomes a predetermined value.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile