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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9484414 B1

PDFFull Text
Date of Patent:
Nov. 01, 2016

Filed:

Dec. 19, 2013

Semiconductor device

Applicant:

Sumitomo Electric Industries, Ltd., Osaka-shi, JP;

Inventors:

Hirofumi Yamamoto, Osaka, JP;

Toru Hiyoshi, Osaka, JP;

Shinji Matsukawa, Itami, JP;

Assignee:

Sumitomo Electric Industries, Ltd., Osaka-shi, JP;

Attorneys:

Venable LLP

Michael A. Sartori

F. Brock Riggs

Primary Examiner:

Eva Y Montalvo

Assistant Examiner:

Quovaunda V Jefferson

Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/16 (2006.01); H01L 29/417 (2006.01); H01L 29/47 (2006.01); H01L 29/872 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 21/04 (2006.01); H01L 29/78 (2006.01); H01L 29/04 (2006.01); H01L 21/28 (2006.01); H01L 29/12 (2006.01); H01L 29/45 (2006.01); H01L 29/861 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/049 (2013.01); H01L 21/28 (2013.01); H01L 29/045 (2013.01); H01L 29/08 (2013.01); H01L 29/12 (2013.01); H01L 29/417 (2013.01); H01L 29/45 (2013.01); H01L 29/47 (2013.01); H01L 29/6606 (2013.01); H01L 29/66068 (2013.01); H01L 29/78 (2013.01); H01L 29/7802 (2013.01); H01L 29/7827 (2013.01); H01L 29/861 (2013.01); H01L 29/872 (2013.01); H01L 29/1075 (2013.01);
Abstract

A MOSFET includes a silicon carbide substrate including a main surface having an off angle with respect to a {0001} plane and a source electrode formed in contact with the main surface. A base surface is exposed at at least a part of a contact interface of the silicon carbide substrate with the source electrode. With such a construction, the MOSFET achieves suppressed variation in threshold voltage.

Find Patent Forward Citations

Yamamoto, Hirofumi. (2016). Semiconductor device (U.S. Patent No. 9484414). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9484414

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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