The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2016
Filed:
Aug. 28, 2015
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Hae Chan Park, Gyeonggi-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/425 (2006.01); H01L 21/38 (2006.01); H01L 27/24 (2006.01); H01L 29/66 (2006.01); H01L 45/00 (2006.01); H01L 29/423 (2006.01); H01L 29/08 (2006.01); H01L 21/02 (2006.01); H01L 21/3213 (2006.01); H01L 21/04 (2006.01); H01L 27/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2454 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 21/0455 (2013.01); H01L 21/32139 (2013.01); H01L 27/101 (2013.01); H01L 29/0847 (2013.01); H01L 29/42356 (2013.01); H01L 29/66666 (2013.01); H01L 45/04 (2013.01); H01L 45/1233 (2013.01); H01L 45/1675 (2013.01);
Abstract
A method for fabricating a semiconductor apparatus includes forming a diffusion barrier film on a semiconductor substrate, forming a first film on a semiconductor substrate including a common source region, forming a second film on the first film, forming a conductive film on the second film, patterning the conductive film and the second film, to form an active pattern, and patterning the first film and the semiconductor substrate using the active pattern as a mask, to form a pillar; and forming a gate electrode on an outer circumference of the pillar.