The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2016
Filed:
Mar. 16, 2016
Northrop Grumman Systems Corporation, Falls Church, VA (US);
General Electric Company, Schenectady, NY (US);
Vincent Gambin, Rancho Palos Verdes, CA (US);
Benjamin D. Poust, Hawthorne, CA (US);
Dino Ferizovic, Torrance, CA (US);
Stanton E. Weaver, Broadalbin, NY (US);
Gary D. Mandrusiak, Latham, NY (US);
Northrop Grumman Systems Corporation, Falls Church, VA (US);
General Electric Company, Schenectady, NY (US);
Abstract
A MMIC power amplifier circuit assembly comprised of a SiC substrate having a plurality of microchannels formed therein, where a diamond layer is provided within each of the microchannels. A plurality of GaN HEMT devices are provided on the substrate where each HEMT device is positioned directly opposite to a microchannel. A silicon manifold is coupled to the substrate and includes a plurality of micro-machined channels formed therein that include a jet impingement channel positioned directly adjacent each microchannel, a return channel directly positioned adjacent to each microchannel, a supply channel supplying a cooling fluid to the impingement channels and a return channel collecting heated cooling fluid from the supply channels so that an impingement jet is directed on to the diamond layer for removing heat generated by the HEMT devices.