The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2016
Filed:
Jun. 02, 2015
Applicant:
Sandia Corporation, Albuquerque, NM (US);
Inventors:
Todd Bauer, Albuquerque, NM (US);
Andrew John Gross, Redwood City, CA (US);
Peggy J. Clews, Tijeras, NM (US);
Roy H. Olsson, Albuquerque, NM (US);
Assignee:
Sandia Corporation, Albuquerque, NM (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 41/332 (2013.01); H01L 41/331 (2013.01); H01L 41/18 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01L 21/308 (2013.01); H01L 21/31116 (2013.01); H01L 21/31122 (2013.01); H01L 21/32136 (2013.01); H01L 21/32139 (2013.01); H01L 41/18 (2013.01); H01L 41/331 (2013.01); H01L 41/332 (2013.01);
Abstract
The present invention provides methods for etching semiconductor devices, such aluminum nitride resonators. The methods herein allow for devices having improved etch profiles, such that nearly vertical sidewalls can be obtained. In some examples, the method employs a dry etch step with a primary etchant gas that omits BCl, a common additive.