The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 2016

Filed:

Mar. 03, 2015
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;

Inventors:

Taishi Ishikura, Kuwana Mie, JP;

Akihiro Kajita, Yokkaichi Mie, JP;

Tadashi Sakai, Yokohama Kanagawa, JP;

Atsunobu Isobayashi, Yokkaichi Mie, JP;

Makoto Wada, Yokkaichi Mie, JP;

Tatsuro Saito, Yokkaichi Mie, JP;

Masayuki Kitamura, Yokkaichi Mie, JP;

Atsuko Sakata, Yokkaichi Mie, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/283 (2006.01); H01L 23/544 (2006.01); H01L 21/02 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 21/283 (2013.01); H01L 21/0243 (2013.01); H01L 21/02527 (2013.01); H01L 21/02645 (2013.01); H01L 23/544 (2013.01); H01L 29/1606 (2013.01); H01L 2223/54426 (2013.01);
Abstract

According to one embodiment, a semiconductor device is disclosed. The device includes a foundation layer including first and second layers being different from each other in material, and the foundation layer including a surface on which a boundary of the first and second layers is presented, a catalyst layer on the surface of the foundation layer, and the catalyst layer including a protruding area. The device further includes a graphene layer being in contact with the protruding area.


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