The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2016
Filed:
Mar. 31, 2015
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01); G11C 16/14 (2006.01); G11C 16/34 (2006.01); G11C 11/56 (2006.01); G11C 13/00 (2006.01); G11C 16/10 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 16/14 (2013.01); G11C 11/5621 (2013.01); G11C 11/5628 (2013.01); G11C 11/5635 (2013.01); G11C 11/5671 (2013.01); G11C 11/5678 (2013.01); G11C 13/0004 (2013.01); G11C 13/0064 (2013.01); G11C 13/0069 (2013.01); G11C 13/0097 (2013.01); G11C 16/10 (2013.01); G11C 16/3459 (2013.01); G11C 16/0483 (2013.01); G11C 2013/0073 (2013.01);
Abstract
A method of operating the semiconductor device includes performing an erase operation on a plurality of memory cells, performing a back-tunneling operation by injecting electrons into a storage node from a gate electrode of a memory cell, selected among the plurality of memory cells, and performing a program operation by injecting electrons into the storage node from a channel layer of the selected memory cell.