The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 2016

Filed:

Mar. 12, 2014
Applicant:

Bt Imaging Pty Ltd, Redfern, New South Wales, AU;

Inventors:

Thorsten Trupke, Coogee, AU;

Robert Andrew Bardos, Bronte, AU;

Assignee:

BT IMAGING PTY LTD, Sydney, AU;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/95 (2006.01); G01N 21/64 (2006.01); G01N 21/66 (2006.01); G01N 21/956 (2006.01); H01L 31/0224 (2006.01);
U.S. Cl.
CPC ...
G01N 21/9501 (2013.01); G01N 21/64 (2013.01); G01N 21/6489 (2013.01); G01N 21/66 (2013.01); G01N 21/956 (2013.01); H01L 31/022425 (2013.01);
Abstract

Embodiments of methods and systems for identifying or determining spatially resolved properties in indirect bandgap semiconductor devices such as solar cells are described. In one embodiment, spatially resolved properties of an indirect bandgap semiconductor device are determined by externally exciting the indirect bandgap semiconductor device to cause the indirect bandgap semiconductor device to emit luminescence (), capturing images of luminescence emitted from the indirect bandgap semiconductor device in response to the external excitation (), and determining spatially resolved properties of the indirect bandgap semiconductor device based on a comparison of relative intensities of regions in one or more of the luminescence images ().


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