The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2016
Filed:
Nov. 14, 2014
Infinitum Solutions, Inc., Santa Clara, CA (US);
Juergen Heidmann, Salinas, CA (US);
Infinitum Solutions, Inc., Santa Clara, CA (US);
Abstract
A crystal film with nitrogen vacancy centers is placed in close proximity to a photon emitter. Excitation illumination is produced to cause the nitrogen vacancy centers to produce photoluminescence. Illumination is produced by the photon emitter, which may be near field or far field and which quenches the photoluminescence intensity using an effect known as Stimulated Emission Depletion (STED). The quenching caused by the photon emitter is detected and analyzed to determine characteristics of the photon emitter. The analysis takes into account the characteristic dependence of the STED on the depletion light power, i.e. the photon source, and a spatial distribution of the light intensity. The analysis may be applied to spatially resolved measurements or an integral value of the photoluminescence quenching. The analysis may determine characteristics such as peak power, power scaling factor, and FWHM of the illumination profile of the photon emitter.