The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2016
Filed:
Nov. 19, 2012
Applicant:
Soitec, Bernin, FR;
Inventors:
Chantal Arena, Mesa, AZ (US);
Christiaan Werkhoven, Gilbert, AZ (US);
Assignee:
SOITEC, Bernin, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/30 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); C30B 25/10 (2006.01); C30B 29/40 (2006.01); C30B 35/00 (2006.01); H01L 21/02 (2006.01); C30B 25/14 (2006.01);
U.S. Cl.
CPC ...
C30B 25/10 (2013.01); C23C 16/303 (2013.01); C23C 16/4411 (2013.01); C23C 16/4412 (2013.01); C23C 16/45504 (2013.01); C23C 16/45593 (2013.01); C30B 25/14 (2013.01); C30B 29/406 (2013.01); C30B 35/00 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01);
Abstract
A system for epitaxial deposition of a Group III-V semiconductor material that includes gallium. The system includes sources of the reactants, one of which is a gaseous Group III precursor having one or more gaseous gallium precursors and another of which is a gaseous Group V component, a reaction chamber wherein the reactants combine to deposit Group III-V semiconductor material, and one or more heating structures for heating the gaseous Group III precursors prior to reacting to a temperature to decompose substantially all dimers, trimers or other molecular variations of such precursors into their monomer forms.