The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 25, 2016

Filed:

Apr. 20, 2015
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Krzysztof Domanski, Munich, DE;

Wolfgang Soldner, Unterhaching, DE;

Cornelius Christian Russ, Diedorf, DE;

David Alvarez, Munich, DE;

Adrien Ille, Munich, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H 9/00 (2006.01); H02H 9/04 (2006.01); H01L 27/02 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H02H 9/046 (2013.01); H01L 27/0285 (2013.01); H01L 29/0692 (2013.01); H01L 29/1083 (2013.01);
Abstract

In an embodiment, an electrostatic discharge (ESD) circuit for providing protection between a first node and a second node includes a first MOS device having a first source/drain coupled to a first node, and a second source/drain coupled to an intermediate node. The ESD circuit also includes a first capacitor coupled between a gate of the first MOS device and the first node, a first resistor coupled between the gate of the first MOS device the intermediate node, a second MOS device having a first source/drain coupled to the intermediate node, and a second source/drain coupled to the second node, a second capacitor coupled between a gate of the second MOS device and the first node, and a second resistor coupled between the gate of the second MOS device and the second node.


Find Patent Forward Citations

Loading…