The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2016
Filed:
Aug. 14, 2014
Applicant:
Furukawa Electric Co., Ltd., Tokyo, JP;
Inventors:
Assignee:
FURUKAWA ELECTRIC CO., LTD., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/16 (2006.01); H01S 5/30 (2006.01); H01S 5/20 (2006.01); H01S 5/042 (2006.01); H01S 5/32 (2006.01); H01S 5/34 (2006.01);
U.S. Cl.
CPC ...
H01S 5/164 (2013.01); H01S 5/0421 (2013.01); H01S 5/162 (2013.01); H01S 5/168 (2013.01); H01S 5/2072 (2013.01); H01S 5/3054 (2013.01); H01S 5/3223 (2013.01); H01S 5/3427 (2013.01);
Abstract
A semiconductor laser element includes: a window region including a disordered portion formed by diffusion of a group-III vacancy, the diffusion promoted by providing on the window region a promoting film that absorbs a predetermined atom; a non-window region including an active layer of a quantum well structure; and a difference equal to or larger than 50 meV between an energy band gap in the window region and an energy band gap in the non-window region.