The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 25, 2016

Filed:

May. 26, 2015
Applicant:

The Board of Trustees of the University of Illinois, Urbana, IL (US);

Inventors:

Milton Feng, Champaign, IL (US);

Nick Holonyak, Jr., Urbana, IL (US);

Mong-Kai Wu, Champaign, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); H01S 5/062 (2006.01); H01S 5/10 (2006.01); H01S 5/34 (2006.01); G11C 13/04 (2006.01); G11C 7/10 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 29/737 (2006.01); H01L 29/06 (2006.01); H01L 33/00 (2010.01); G11C 7/00 (2006.01); G11C 11/42 (2006.01); H01L 33/10 (2010.01);
U.S. Cl.
CPC ...
H01S 5/06203 (2013.01); G11C 7/005 (2013.01); G11C 7/10 (2013.01); G11C 11/42 (2013.01); G11C 13/04 (2013.01); H01L 29/0692 (2013.01); H01L 29/0804 (2013.01); H01L 29/0817 (2013.01); H01L 29/0821 (2013.01); H01L 29/41708 (2013.01); H01L 29/7371 (2013.01); H01L 33/0016 (2013.01); H01S 5/1071 (2013.01); H01S 5/34 (2013.01); H01L 33/105 (2013.01);
Abstract

A ring cavity light-emitting transistor device, including: a planar semiconductor structure of a semiconductor base layer of a first conductivity type between semiconductor collector and emitter layers of a second conductivity type; base, collector, and emitter metalizations respectively coupled with the base layer, said collector layer, and said emitter layer, the base metalization including at least one annular ring coupled with a surface of the base layer; and an annular ring-shaped optical resonator in a region of the semiconductor structure generally including the interface of the base and emitter regions; whereby application of electrical signals with respect to the base, collector, and emitter metalizations causes light emission in the base layer that propagates in the ring-shaped optical resonator cavity.


Find Patent Forward Citations

Loading…