The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2016
Filed:
Feb. 06, 2014
Epistar Corporation, Hsinchu, TW;
Tsung-Hsien Yang, Hsinchu, TW;
Tzu-Chieh Hsu, Hsinchu, TW;
Yi-Ming Chen, Hsinchu, TW;
Yi-Tang Lai, Hsinchu, TW;
Jhih-Jheng Yang, Hsinchu, TW;
Chih-Wei Wei, Hsinchu, TW;
Ching-Sheng Chen, Hsinchu, TW;
Shih-I Chen, Hsinchu, TW;
Chia-Liang Hsu, Hsinchu, TW;
Ye-Ming Hsu, Hsinchu, TW;
EPISTAR CORPORATION, Hsinchu, TW;
Abstract
A light-emitting device is disclosed and comprises: a transparent substrate; a semiconductor light-emitting stack on the transparent substrate, wherein the semiconductor light-emitting stack comprises a first semiconductor layer close to the transparent substrate, a second semiconductor layer away from the transparent substrate, and a light-emitting layer capable of emitting a light disposed between the first semiconductor layer and the second semiconductor layer; and a bonding layer between the transparent substrate and the semiconductor light-emitting stack, wherein the bonding layer has a gradually changed refractive index, and each of critical angles at the bonding layer and the transparent substrate for the light emitted from the light-emitting layer towards the transparent substrate is larger than 35 degrees.