The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2016
Filed:
Dec. 07, 2015
Sifotonics Technologies Co., Ltd., Grand Cayman, KY;
Mengyuan Huang, Beijing, CN;
Pengfei Cai, Beijing, CN;
Liangbo Wang, Beijing, CN;
Su Li, Beijing, CN;
Wang Chen, Beijing, CN;
Ching-yin Hong, Lexington, MA (US);
Dong Pan, Andover, MA (US);
SIFOTONICS TECHNOLOGIES CO., LTD., Grand Cayman, KY;
Abstract
A high-speed germanium on silicon (Ge/Si) avalanche photodiode may include a substrate layer, a bottom contact layer disposed on the substrate layer, a buffer layer disposed on the bottom contact layer, an electric field control layer disposed on the buffer layer, an avalanche layer disposed on the electric field control layer, a charge layer disposed on the avalanche layer, an absorption layer disposed on the charge layer, and a top contact layer disposed on the absorption layer. The electric field contact layer may be configured to control an electric field in the avalanche layer.