The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 25, 2016

Filed:

Sep. 23, 2013
Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Anne-Sophie Ozanne, Allevard, FR;

Maria-Delfina Munoz, Saint Christophe sur Guiers, FR;

Nathalie Nguyen, Les Marches, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0256 (2006.01); H01L 31/0376 (2006.01); H01L 31/0747 (2012.01); H01L 31/074 (2012.01); H01L 31/20 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0376 (2013.01); H01L 31/074 (2013.01); H01L 31/0747 (2013.01); H01L 31/208 (2013.01); Y02E 10/50 (2013.01);
Abstract

A method for producing a heterojunction solar cell including the following successive steps: providing a substrate made from crystalline semiconductor material, doped with a first type of doping, and provided with a first main face; depositing a first layer of intrinsic amorphous semiconductor material on said first main face of the substrate; and forming a second layer of amorphous semiconductor material on the first layer. The method includes deposition of a barrier layer between the first and second layers, said barrier layer being of different nature from those of the first and second layers and includes doping of the second layer by ion implantation.


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