The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2016
Filed:
Dec. 02, 2013
Applicant:
Rohm Co., Ltd., Kyoto-shi, Kyoto, JP;
Inventors:
Masatoshi Aketa, Kyoto, JP;
Yuta Yokotsuji, Kyoto, JP;
Assignee:
ROHM CO., LTD., Kyoto, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/872 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 21/285 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); H01L 21/02236 (2013.01); H01L 21/0495 (2013.01); H01L 21/28556 (2013.01); H01L 29/045 (2013.01); H01L 29/0619 (2013.01); H01L 29/0661 (2013.01); H01L 29/0692 (2013.01); H01L 29/1608 (2013.01); H01L 29/402 (2013.01); H01L 29/408 (2013.01); H01L 29/6606 (2013.01); H01L 29/66143 (2013.01); H01L 21/02255 (2013.01); H01L 29/1602 (2013.01); H01L 29/2003 (2013.01);
Abstract
The semiconductor device of the present invention includes a semiconductor layer made of a wide bandgap semiconductor, a trench that is selectively formed on a surface portion of the semiconductor layer and that defines a unit cell having a predetermined shape on the surface portion, and a surface electrode that is embedded in the trench so as to cover an upper surface of the unit cell and that forms a Schottky junction between the unit cell and the surface electrode, and side surfaces of the trench are formed of only a plurality of planes that have plane orientations crystallographically equivalent to each other.