The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2016
Filed:
Aug. 25, 2014
YE Xin Technology Consulting Co., Ltd., Hsinchu, TW;
I-Wei Wu, Hsinchu, TW;
I-Min Lu, Hsinchu, TW;
Wei-Chih Chang, Hsinchu, TW;
Hui-Chu Lin, Hsinchu, TW;
Yi-Chun Kao, Hsinchu, TW;
Kuo-Lung Fang, Hsinchu, TW;
HON HAI PRECISION INDUSTRY CO., LTD., New Taipei, TW;
Abstract
A thin film transistor includes a gate electrode, a gate insulating layer, a channel layer, an etching stop layer, two contact holes, a source, and a drain. The gate insulating layer covers the gate electrode. The channel layer is arranged on the gate insulating layer corresponding to the gate electrode. The etching stop layer covers the channel layer and includes an organic stop layer and a hard mask layer, the hard mask layer is located on a surface of the organic stop layer opposite to the channel layer to enhance a hardness of the organic stop layer. The two contact holes pass through the etching stop layer. The source connects to the channel via one contact hole, and the drain connects to the channel via the other contact hole.