The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2016
Filed:
Mar. 18, 2015
Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;
Yeon Keon Moon, Seoul, KR;
Masataka Kano, Hwaseong-si, KR;
Sung-Hoon Yang, Seoul, KR;
Ji Hun Lim, Goyang-si, KR;
So Young Koo, Yongin-si, KR;
Myoung Hwa Kim, Seoul, KR;
Jun Hyung Lim, Seoul, KR;
SAMSUNG DISPLAY CO., LTD., Yongin, Gyeonggi-Do, KR;
Abstract
A thin film transistor substrate includes a substrate, a bottom gate on the substrate, a first insulating layer on the substrate and on the bottom gate, a drain on the first insulating layer, a source on the first insulating layer, the source including a first source at a first side of the drain and a second source at a second side of the drain, an active layer on the first insulating layer, the active layer including a first active layer contacting the drain and the first source and a second active layer contacting the drain and the second source, a second insulating layer on the drain, the source, and the active layer, and a top gate on the second insulating layer.