The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2016
Filed:
Dec. 18, 2014
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Shunpei Yamazaki, Tokyo, JP;
Akihisa Shimomura, Kanagawa, JP;
Yasumasa Yamane, Kanagawa, JP;
Yuhei Sato, Kanagawa, JP;
Tetsuhiro Tanaka, Kanagawa, JP;
Masashi Tsubuku, Kanagawa, JP;
Toshihiko Takeuchi, Kanagawa, JP;
Ryo Tokumaru, Kanagawa, JP;
Mitsuhiro Ichijo, Kanagawa, JP;
Satoshi Toriumi, Kanagawa, JP;
Takashi Ohtsuki, Kanagawa, JP;
Toshiya Endo, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. The semiconductor device includes an oxide semiconductor film over an insulating surface, an antioxidant film over the insulating surface and the oxide semiconductor film, a pair of electrodes in contact with the antioxidant film, a gate insulating film over the pair of electrodes, and a gate electrode which is over the gate insulating film and overlaps with the oxide semiconductor film. In the antioxidant film, a width of a region overlapping with the pair of electrodes is longer than a width of a region not overlapping with the pair of electrodes.