The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2016
Filed:
Jul. 14, 2015
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Kazutaka Takagi, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
A field effect transistor includes multi-finger electrodes, a gate terminal electrode, a drain terminal electrode, a source terminal and a source terminal electrode. Each of the multi-finger electrodes includes two finger gate electrodes, a finger drain electrode, and at least two finger source electrodes. Finger electrodes are arranged so as to intersect with the first straight line at an angle of approximately +45 degrees and approximately −45 degrees alternately. The gate terminal electrode commonly bundles and connects the finger gate electrodes of two adjacent cell regions. The drain terminal electrode commonly bundles and connects the finger drain electrodes of two adjacent cell regions. And the source terminal electrode commonly bundles and connects the finger source electrodes of two adjacent cell regions. The gate terminal electrodes and the drain terminal electrodes are alternately provided in a connecting region of the multi-finger electrodes of two adjacent cell regions.