The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2016
Filed:
Apr. 02, 2013
Ngk Insulators, Ltd., Nagoya-Shi, JP;
Tomohiko Sugiyama, Nagoya, JP;
Sota Maehara, Nagoya, JP;
Shigeaki Sumiya, Handa, JP;
Mitsuhiro Tanaka, Tsukuba, JP;
NGK Insulators, Ltd., Nagoya, JP;
Abstract
Provided is a semiconductor device in which a reverse leakage current is suppressed and the mobility of a two-dimensional electron gas is high. A semiconductor device includes: an epitaxial substrate in which a group of group-III nitride layers are laminated on a base substrate such that a (0001) crystal plane is substantially in parallel with a substrate surface; and a Schottky electrode. The epitaxial substrate includes: a channel layer made of a first group-III nitride having a composition of InAlGaN (x1+y1+z1=1, z1>0); a barrier layer made of a second group-III nitride having a composition of InAlN (x2+y2=1, x2>0, y2>0); an intermediate layer made of GaN adjacent to the barrier layer; and a cap layer made of AlN and adjacent to the intermediate layer. A Schottky electrode is bonded to the cap layer.