The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2016
Filed:
Jul. 27, 2011
Anup Bhalla, Santa Clara, CA (US);
Madhur Bobde, Sunnyvale, CA (US);
Yongping Ding, Sunnyvale, CA (US);
Xiaotian Zhang, San Jose, CA (US);
Yueh-se Ho, Sunnyvale, CA (US);
Anup Bhalla, Santa Clara, CA (US);
Madhur Bobde, Sunnyvale, CA (US);
Yongping Ding, Sunnyvale, CA (US);
Xiaotian Zhang, San Jose, CA (US);
Yueh-Se Ho, Sunnyvale, CA (US);
ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED, Sunnyvale, CA (US);
Abstract
A method for fabricating an anode-shorted field stop insulated gate bipolar transistor (IGBT) comprises selectively forming first and second semiconductor implant regions of opposite conductivity types. A field stop layer of a second conductivity type can be grown onto or implanted into the substrate. An epitaxial layer can be grown on the substrate or on the field stop layer. One or more insulated gate bipolar transistors (IGBT) component cells are formed within the epitaxial layer.