The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 25, 2016

Filed:

Sep. 04, 2012
Applicants:

Nozomu Akagi, Nukata-gun, JP;

Yuma Kagata, Kariya, JP;

Makoto Kuwahara, Nagoya, JP;

Inventors:

Nozomu Akagi, Nukata-gun, JP;

Yuma Kagata, Kariya, JP;

Makoto Kuwahara, Nagoya, JP;

Assignee:

DENSO CORPORATION, Kariya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/405 (2013.01); H01L 29/0634 (2013.01); H01L 29/404 (2013.01); H01L 29/7803 (2013.01); H01L 29/7808 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/0878 (2013.01);
Abstract

The element electrodes of a semiconductor element are disposed in a cell region, while an outermost peripheral electrode electrically connected to a semiconductor substrate is disposed in a peripheral region. In the peripheral region, a second-conductivity-type layer is disposed above a super-junction structure. A potential division region is disposed above the second-conductivity-type layer to electrically connect the element electrodes and the outermost peripheral electrode and also divide the voltage between the element electrodes and the outermost peripheral electrode into a plurality of stages. A part of the potential division region overlaps the peripheral region when viewed from the thickness direction of the semiconductor substrate.


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