The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2016
Filed:
May. 18, 2015
Applicant:
Imec Vzw, Leuven, BE;
Inventors:
Boon Teik Chan, Leuven, BE;
Clement Merckling, Evere, BE;
Assignee:
IMEC VZW, Leuven, BE;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/786 (2006.01); H01L 29/04 (2006.01); H01L 29/20 (2006.01); H01L 29/34 (2006.01); H01L 21/02 (2006.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01); H01L 29/775 (2006.01); H01L 29/41 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0676 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); H01L 21/02538 (2013.01); H01L 21/02603 (2013.01); H01L 29/045 (2013.01); H01L 29/1037 (2013.01); H01L 29/20 (2013.01); H01L 29/34 (2013.01); H01L 29/413 (2013.01); H01L 29/66469 (2013.01); H01L 29/775 (2013.01); H01L 29/78642 (2013.01); H01L 29/78681 (2013.01);
Abstract
An example semiconductor structure comprises a first surface and at least one nanowire, the at least one nanowire being perpendicular to the first surface, wherein the first surface is defect-poor and is made of a doped III-V semiconductor material, wherein the at least one nanowire is defect-poor and made of an undoped III-V semiconductor material having a lattice mismatch with the material of the first surface of from about 0% to 1%.