The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 25, 2016

Filed:

Oct. 30, 2015
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Kerstin Kaemmer, Radebeul, DE;

Thomas Bertrams, Dresden, DE;

Henning Feick, Dresden, DE;

Olaf Storbeck, Dresden, DE;

Matthias Schmeide, Langebrueck, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); H01L 27/112 (2006.01); H01L 21/02 (2006.01); H01L 29/51 (2006.01); H01L 23/525 (2006.01); H01L 29/423 (2006.01); H01L 21/265 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11206 (2013.01); H01L 21/02233 (2013.01); H01L 21/26506 (2013.01); H01L 21/2822 (2013.01); H01L 21/28211 (2013.01); H01L 23/5256 (2013.01); H01L 29/42368 (2013.01); H01L 29/513 (2013.01); H01L 2924/0002 (2013.01);
Abstract

According to various embodiments, a method for processing a carrier may include: doping a carrier with fluorine such that a first surface region of the carrier is fluorine doped and a second surface region of the carrier is at least one of free from the fluorine doping or less fluorine doped than the first surface region; and oxidizing the carrier to grow a first gate oxide layer from the first surface region of the carrier with a first thickness and simultaneously from the second surface region of the carrier with a second thickness different from the first thickness.


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