The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 25, 2016

Filed:

Feb. 11, 2013
Applicant:

Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;

Inventors:

Yukihiro Sato, Tokyo, JP;

Tomoaki Uno, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/492 (2006.01); H01L 23/495 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H02M 7/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/492 (2013.01); H01L 23/4952 (2013.01); H01L 23/49524 (2013.01); H01L 23/49548 (2013.01); H01L 23/49575 (2013.01); H01L 23/49582 (2013.01); H01L 24/05 (2013.01); H01L 24/33 (2013.01); H01L 24/34 (2013.01); H01L 24/36 (2013.01); H01L 24/40 (2013.01); H01L 24/48 (2013.01); H01L 24/49 (2013.01); H01L 24/73 (2013.01); H01L 24/83 (2013.01); H01L 24/84 (2013.01); H01L 24/91 (2013.01); H01L 23/3107 (2013.01); H01L 24/45 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05553 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/32014 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/37011 (2013.01); H01L 2224/40095 (2013.01); H01L 2224/40245 (2013.01); H01L 2224/40247 (2013.01); H01L 2224/45015 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/4847 (2013.01); H01L 2224/48095 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48639 (2013.01); H01L 2224/48644 (2013.01); H01L 2224/49111 (2013.01); H01L 2224/49112 (2013.01); H01L 2224/49113 (2013.01); H01L 2224/49171 (2013.01); H01L 2224/73219 (2013.01); H01L 2224/73221 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/83801 (2013.01); H01L 2224/85439 (2013.01); H01L 2224/92 (2013.01); H01L 2224/92247 (2013.01); H01L 2924/0102 (2013.01); H01L 2924/01004 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01014 (2013.01); H01L 2924/01015 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01023 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/0134 (2013.01); H01L 2924/01041 (2013.01); H01L 2924/01046 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01075 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/0665 (2013.01); H01L 2924/12044 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/14 (2013.01); H01L 2924/1433 (2013.01); H01L 2924/15747 (2013.01); H01L 2924/181 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/19043 (2013.01); H01L 2924/30107 (2013.01); H01L 2924/351 (2013.01); H02M 7/003 (2013.01);
Abstract

The reliability of a semiconductor device is improved. A package of a semiconductor device internally includes a first semiconductor chip and a second semiconductor chip in which power MOS•FETs are formed and a third semiconductor chip in which a control circuit controlling the first and second semiconductor chips is formed. The first to third semiconductor chips are mounted on die pads respectively. Source electrode bonding pads of the first semiconductor chip on a high side are electrically connected with a first die pad of the die pads via a metal plate. On a top surface of the die padD, a plated layer formed in a region where the second semiconductor chip is mounted, and another plated layer formed in a region where the metal plate is joined are provided and the plated layers are separated each other with a region where no plated layer is formed in between.


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