Semiconductor device including power and logic devices and related fabrication methods

Abstract

Semiconductor device structures and related fabrication methods are provided. An exemplary fabrication method involves forming a layer of gate electrode material overlying a semiconductor substrate, forming a layer of masking material overlying the gate electrode material, and patterning the layer of masking material to define a channel region within a well region in the semiconductor substrate that underlies the gate electrode material. Prior to removing the patterned layer of masking material, the fabrication process etches the layer of gate electrode material to form a gate structure overlying the channel region using the patterned layer of masking material as an etch mask and forms extension regions in the well region using the patterned layer of masking material as an implant mask. Thereafter, the patterned layer of masking material is removed after forming the gate structure and the extension regions.