The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2016
Filed:
Dec. 03, 2012
Applicant:
Wuxi China Resources Huajing Microelectronics Co., Ltd., Wuxi, Jiangsu, CN;
Inventors:
Assignee:
University of Utah Research Foundation, Salt Lake City, UT (US);
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/448 (2006.01); C23C 16/453 (2006.01); H01L 21/3215 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32155 (2013.01); C23C 16/448 (2013.01); C23C 16/453 (2013.01); C23C 16/455 (2013.01); C23C 16/45502 (2013.01);
Abstract
A low-pressure chemical vapor deposition (LPCVD) apparatus and a thin-film deposition method thereof. The apparatus comprises a reaction furnace, having reaction gas input pipelines respectively arranged at a furnace opening part and a furnace tail part. During thin film deposition, each reaction gas is synchronously introduced into the reaction furnace through the input pipeline at the furnace opening part and the input pipeline at the furnace tail part.
Wang, Xunhui. (2016). Low-pressure chemical vapor deposition apparatus and thin-film deposition method thereof (U.S. Patent No. 9478440). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9478440
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile