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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9478283 B1

PDFFull Text
Date of Patent:
Oct. 25, 2016

Filed:

Nov. 19, 2013

Nonvolatile semiconductor storage device having improved reading and writing speed characteristics

Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Reiji Mochida, Osaka, JP;

Kazuyuki Kouno, Osaka, JP;

Assignee:

PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD., Osaka, JP;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Connie Yoha

Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); G11C 11/22 (2006.01); H01L 45/00 (2006.01); H01L 27/22 (2006.01); H01L 27/24 (2006.01); G11C 8/14 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 8/14 (2013.01); G11C 11/1653 (2013.01); G11C 11/1655 (2013.01); G11C 11/1657 (2013.01); G11C 11/1659 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 11/22 (2013.01); G11C 11/2253 (2013.01); G11C 11/2255 (2013.01); G11C 11/2257 (2013.01); G11C 11/2259 (2013.01); G11C 11/2273 (2013.01); G11C 11/2275 (2013.01); G11C 13/0002 (2013.01); G11C 13/003 (2013.01); G11C 13/0004 (2013.01); G11C 13/0007 (2013.01); G11C 13/0023 (2013.01); G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); G11C 13/0069 (2013.01); G11C 13/0097 (2013.01); H01L 27/228 (2013.01); H01L 27/2436 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); G11C 2013/005 (2013.01); G11C 2013/009 (2013.01); G11C 2013/0071 (2013.01); G11C 2213/79 (2013.01); G11C 2213/82 (2013.01);
Abstract

A nonvolatile semiconductor memory device includes: a memory cell (MC) including a cell transistor (TC) and a variable resistance element (RR); a memory cell (MC) including a cell transistor (TC) and a variable resistance element (RR); a word line (WL) connected to the cell transistor (TC); a word line (WL) connected to the cell transistor (TC); a data line (SL) connecting the cell transistor (TC) and the variable resistance element (RR) to each other; and a data line (BL) connecting the variable resistance element (RR) and the cell transistor (TC) to each other.

Find Patent Forward Citations

Mochida, Reiji. (2016). Nonvolatile semiconductor storage device having improved reading and writing speed characteristics (U.S. Patent No. 9478283). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9478283

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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