The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 25, 2016

Filed:

May. 28, 2015
Applicant:

SK Hynix Inc., Icheon-si Gyeonggi-do, KR;

Inventor:

Myung Hwan Lee, Cheonan-si, KR;

Assignee:

SK HYNIX INC., Icheon-Si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/14 (2006.01);
U.S. Cl.
CPC ...
G11C 5/147 (2013.01);
Abstract

A semiconductor device may include a target voltage generation section configured to generate first and second target voltages. The semiconductor device may include a comparison signal generation section configured to compare levels of the first and second target voltages with levels of first and second internal voltages, and generate first and second comparison signals. The semiconductor device may include a latch code generation section configured to latch global codes and output first and second latch codes in response to the first and second comparison signals. The semiconductor device may include a selection code generation section configured to generate first and second selection codes for adjusting levels of the first and second internal voltages using either the global codes or the first and second latch codes.


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