The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 25, 2016

Filed:

Jul. 25, 2014
Applicant:

Sunedison, Inc., St. Peters, MO (US);

Inventor:

Tirumani Swaminathan, Houston, TX (US);

Assignee:

SunEdison, Inc., Maryland Heights, MO (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/12 (2006.01); C30B 15/02 (2006.01); C30B 29/06 (2006.01);
U.S. Cl.
CPC ...
C30B 15/12 (2013.01); C30B 15/02 (2013.01); C30B 29/06 (2013.01); Y10T 117/1052 (2015.01); Y10T 117/1064 (2015.01);
Abstract

A system for growing a crystal ingot from a melt is provided. The system includes a first crucible, a barrier, and a shield. The first crucible has a first base and a first sidewall forming a first cavity for containing the melt. The barrier is disposed within the first cavity of the first crucible to inhibit movement of the melt from outward of the barrier to inward of the barrier. The barrier extends from the first base to above the melt. The barrier has an inner arm and an outer arm extending upward to form a channel therebetween. The shield extends downward between the inner arm and the outer arm to inhibit passage of contaminants.


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